Work

Tuning the interfacial properties of stacked gate dielectrics on silicon carbide by inserting h-BN layer

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0291161

Authors: Xuan Tang, Jingren Chen, Zhanwei Shen, Yuyang Miao, Ji Jiang, Xiaogang Zhu, Yu Huang, Jinyi Xu, Hangshuo Shi, Shizhong Yue, Feng Zhang, Xingwang Zhang, Zhijie Wang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Xiamen University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G1456279242, G2076179910, G2406612915, G5659961849, G8682092554

OpenAlex ID: W4415229702

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Cites: 49

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