Work

Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ae1381

Authors: C Galati, N Spinella, C L Liao, G Anastasi, C Bongiorno, P Fiorenza, M Italia, V C Ngwan, L Renna

Institutions: STMicroelectronics (Italy), STMicroelectronics (Singapore), Institute for Microelectronics and Microsystems

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4415231713

FWCI: 0.231

Cites: 11

Cited by: 1

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