Work

300mm All Silicon Gate-Stack for Si/SiGe Spin Qubit

Year: 2025

Type: conference-paper

Abstract: The process development made on 300 mm Si/SiGe qubit devices, aimed at transitioning from a single-qubit device to a scalable, high-fidelity spin qubit system are presented. This involves the development of various mod-ules, including heterostructure growth, junction, and gate-stack.

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2025.e-5-01

Authors: Clément Godfrin, Arne Loenders, Yosuke Shimura, Roger Loo, Bart Raes, Gulzat Juliel, Sugandha Sharma, Stefan Kubicek, Sofie Beyne, Massimo Mongillo, Danny Wan, Kristiaan De Greve

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4415236169

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