Year: 2025
Type: article
Abstract: In this study, the effects of switching on the two-dimensional electron gas (2-DEG) channel in an E-mode GaN-on-Si HEMT are investigated using a GS-065-004-1-L device that is commercially available for educational practice. A practical prototype with a reduced number of components is proposed, with empirical concepts used to explain its predictive performance when a coreless transformer is series-connected to the E-mode GaN-on-Si HEMT for switching-mode conduction. Conduction modes arising at the p-GaN/n-AlGaN/i-GaN heterojunction in accordance with specifications from the manufacturer's datasheet were validated using a didactic physical-based model dependent on semiconductor parameters of gallium nitride (GaN). Test circuit-examined waveforms were analyzed, which confirmed that the switching conduction mode of the 2-DEG channel is dependent on physical parameters such as switching operating frequency, temperature, low-field electron mobility, and space charge capacitance.
Source: Micromachines
DOI: 10.3390/mi16101173
Author: Roberto Baca-Arroyo
Institution: Instituto Politécnico Nacional
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
OpenAlex ID: W4415246071