Enhanced chemical vapor deposition of monolayer MoS 2 films via a clean promoter
Year: 2025
Type: article
Abstract: Two-dimensional (2D) transition metal dichalcogenides, exemplified by molybdenum disulfide (MoS 2 ), have shown exceptional potential for data-centered, energy-efficient electronic applications due to their unique electrical, optoelectronic, and mechanical properties. However, challenges such as the controllable synthesis of high-quality, large-area 2D MoS 2 films and the mitigation of contamination during growth remain significant barriers to their integration into advanced technologies. Here, photoresist S1813 is innovatively utilized as a contamination-free growth promoter, enabling the clean and scalable synthesis of high quality 2D MoS 2 on SiO 2 /Si substrate with desirable grain structures via chemical vapor deposition. By optimizing the reactant concentration and S/Mo ratio, enhanced MoS 2 growth with improved quality is achieved, as evidenced by the increased MoS 2 flake size and coverage, alongside a strong photoluminescence A exciton peak at 1.84 eV. This approach facilitates the clean and selective growth of high-quality 2D MoS 2 , establishing a robust pathway for the practical implementation of 2D MoS 2 in next-generation electronic devices.
Authors: Lulin Wang, Yue Sun, Kaushik Kannan, Lee Gannon, Xuyun Guo, Aran Rafferty, Karl Gaff, Navaj B Mullani, Haizhong Weng, Yangbo Zhou, Valeria Nicolosi, Cormac McGuinness, Peter Gleeson, Hongzhou Zhang
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,325
Funders: Trinity College Dublin, Research Ireland
Award: G4146503752
OpenAlex ID: W4415289384