Work

Interfacial Layer Engineering in Zr-Doped HfO 2 Ferroelectric Films: Trade-Off Between Polarization Enhancement and Reliability

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c12145

Authors: Shouchen Yang, Wenxuan Ma, Yue Peng, Qiuxia Wu, Shuo Zhang, Wenwu Xiao, Zhen Zhang, Chunfu Zhang, Xiaohua Ma, Yue Hao

Institutions: Xidian University, Xi'an UniIC Semiconductors (China), Xi'an Jiaotong University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: China Association for Science and Technology, National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

Awards: G1773702449, G2436163274, G6025873134, G6894858575

OpenAlex ID: W4415307465

FWCI: 1.83

Cites: 43

Cited by: 8

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