Year: 2025
Type: article
Abstract: Excitons in atomically thin transition metal dichalcogenides (TMDs) possess intriguing optical properties, drawing interest for both technology and fundamental research. However, as the demands for nanodevice applications and the exploration of fundamental physics push toward smaller, subwavelength scales, studying them locally is challenging. In this work, we introduce a cryogenic scanning probe photoelectrical sensing technique, termed exciton-resonant microwave impedance microscopy (ER-MIM), to measure the excitonic responses in a monolayer MoSe2 device at 1.5K. From the microwave signal changes, we identify exciton polarons and their Rydberg states. Building on these observations, we systemically reveal the local and nonlocal effects of carrier density, inhomogeneous electric fields, as well as dielectric screening on excitons, beyond the reach of conventional probes. By further integrating deep learning techniques, we precisely extracted the electrical parameters surrounding excitons, demonstrating a quantified, exciton-assisted nanoscale electrometry. Our results provide new insight into exciton-environment interactions, establish ER-MIM as a powerful optoelectronic sensing platform, and open avenues for exciton-based quantum control and device technologies. Here, the authors introduce a cryogenic scanning probe photoelectrical sensing technique, termed exciton-resonant microwave impedance microscopy, to measure the excitonic responses in monolayer MoSe2 and identify exciton polarons and their Rydberg states.
Source: Nature Communications
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
Funders: National Science Foundation, U.S. Department of Energy, Gordon and Betty Moore Foundation, Ministry of Education, Culture, Sports, Science and Technology, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Office of Science, Japan Society for the Promotion of Science, Division of Materials Research, Division of Electrical, Communications and Cyber Systems, Basic Energy Sciences, SLAC National Accelerator Laboratory, Division of Materials Sciences and Engineering
Awards: G1229526393, G1286251239, Imaging correlations and charge order in transition metal dichalcogenide moiré systems, ENERGY FRONTIER RESEARCH CENTER FOR QUANTUM SENSING AND QUANTUM MATERIALS (QSQM), G2371548206, G237429762, NNCI: nano@stanford, G2442584775, G262532246, G303061748, Second Phase of the QuantEmX Scientist Exchange Program, G3702897590, G3854390519, CAREER: Infrared and Terahertz Electrodynamics of Chiral Materials, G4089419421, G4235786860, G4264918310, G453897845, G4654690619, G4806815962, G495301720, G498139845, G5473946529, G5570207115, G5676086959, G6550344761, G7283024673, G7428312516, G8065195062, G8382000481, Synthesis of high quality single crystals for sience of Boron Nitride, Zhi-Xun Shen Experimental Investigator in Quantum Materials Award, G911061179, G969889393
OpenAlex ID: W4415308650