Work

Defect Engineering in CdS: Resolving p -Type Doping Controversies and Enabling Breakthrough n -Type Conductivity for Thin-Film Photovoltaics

Year: 2025

Type: article

Source: The Journal of Physical Chemistry Letters

DOI: 10.1021/acs.jpclett.5c02700

Authors: Yongcheng Zhu, Zewen Xiao

Institutions: Central South University, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3071388811

OpenAlex ID: W4415313742

FWCI: 0.904

Cites: 124

Cited by: 4

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