Work

Investigation on the short-circuit behavior of HV-SiC-MOSFETs in quasi series connection

Year: 2025

Type: article

Abstract: • In many converter topologies, combinations of short-circuit type I with short-circuit type II or III can occur, referred to as short circuits in quasi series connected devices. • These short-circuit cases are experimentally investigated using a 3.3-kV SiC MOSFET half-bridge module. • Measurements show a highly unequal voltage and energy sharing during short-circuit events between the high-side and low-side switch of the module in favor of the low-side switch, independent of the tested scenario. • Spice simulations reveal asymmetric common-source parasitics – especially the resistive component – as the root cause for uneven load distribution. This paper investigates the short-circuit behavior of SiC MOSFETs in a quasi series connection, a scenario that can be found in more complex topologies, but also in simple two-level phase legs. Besides a theoretical analysis, short-circuit tests for such scenarios are carried out with state-of-the-art 3.3-kV SiC MOSFET half-bridge modules. The analysis particularly focuses on the voltage distribution between the switches within a half-bridge module, evaluating the impact of different device parasitics with impact on the gate circuit.

Source: Power Electronic Devices and Components

DOI: 10.1016/j.pedc.2025.100127

Authors: Felix Gesele, Christian Bäumler, Thomas Basler, Thomas Brückner

Institutions: Universität der Bundeswehr München, Chemnitz University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,500

Funder: European Commission