Work

Quantum Anomalous Hall Effect in a Linear Spin‐Gapless Semiconducting 2D Zn 2 N 3 Monolayer

Year: 2025

Type: article

Source: Annalen der Physik

DOI: 10.1002/andp.202500419

Author: Yang Li

Institutions: Tianjin University, Chongqing Youth Vocational & Technical College

Language: English

Topic: Topological Materials and Phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4415345985

FWCI:

Cites: 71

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