Year: 2025
Type: article
Abstract: Cu-Cu hybrid bonding is a key technology for fine-pitch interconnections in advanced semiconductor packaging. However, native Cu oxidation and interface instability hinder reliable low-temperature bonding. While noble metal passivation can mitigate oxidation, conventional sputtering-based methods pose challenges for Cu/SiO 2 hybrid bonding. Atomic layer deposition (ALD) offers a promising alternative for area-selective metal passivation, enabling precise deposition on Cu surfaces without affecting surrounding dielectrics. In this study, we evaluate the bonding characteristics of ruthenium (Ru) passivation layers deposited using plasma-enhanced ALD (PEALD) and compare them with sputtered Ru passivation layers. While PEALD Ru exhibited comparable thin-film properties, bonding performance was significantly lower, as confirmed by scanning acoustic tomography (SAT) and shear strength measurements. Further analysis revealed that lower crystallinity in PEALD Ru and changes in Cu surface properties due to thermal pre-treatment contributed to reduced bonding strength. These findings provide insights for optimizing ALD-based metal passivation, enabling improved Cu/SiO 2 hybrid bonding for advanced semiconductor packaging.
Source: Scientific Reports
Authors: Sang Woo Park, Hee Han, Chi Won Ahn, Jong Kyung Park
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
OpenAlex ID: W4415384972