A 127-163 GHz LNA with in-band 21-dB gain and 6.8-dB NF in a 55-nm SiGe BiCMOS technology
Year: 2025
Type: conference-paper
Abstract: This article presents the design of a low-noise amplifier (LNA) in a $55-\mathrm{nm}$ SiGe BiCMOS technology targeting high-data-rate applications. The sizing and biasing of the heterojunction bipolar transistor (HBT) are discussed and a design flow is proposed which avoids the systematic use of electromagnetic (EM) solvers. On the one hand, a parametric model for transmission lines addresses the need for design variables while having a good correspondence with EM simulations. On the other hand, a graphical method is proposed to realize a trade-off between noise and conjugate input impedance matching. A complete postlayout simulation of the LNA is performed, showing a 127 163 GHz bandwidth, with a maximum gain of 24 dB and a noise figure below 6.8 dB for $20-\mathrm{mW}$ power consumption. Passive components such as capacitors are measured and compared to the EM simulations.
Institutions: Techniques of Informatics and Microelectronics for Integrated Systems Architecture, Centre National de la Recherche Scientifique, Université de Toulon, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, Institut polytechnique de Grenoble, Université Grenoble Alpes
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4415399407
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