Work

Inequivalence of the low-density insulating state and quantum Hall insulating states in a strongly correlated two-dimensional electron system

Year: 2025

Type: article

Abstract: We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultraclean two-dimensional electron system in SiGe/Si/SiGe quantum wells are qualitatively different. The double-threshold voltage-current curves, representative of the electron solid formation at low densities, are not observed in the quantum Hall regime, which does not confirm the existence of a quasiparticle quantum Hall Wigner solid and indicates that quasiparticles near integer filling do not form an independent subsystem.

Source: Physical review. B./Physical review. B

DOI: 10.1103/l3jk-t6hn

Authors: M. Yu. Melnikov, D. G. Smirnov, A. A. Shashkin, S.-H. Huang, C. W. Liu, S. V. Kravchenko

Institutions: National Taiwan University, Northeastern University

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: National Science and Technology Council, National Science Foundation, National Taiwan University

Awards: Band flattening at the Fermi level as a precursor of quantum electron crystallization, Future Semiconductor Technologies Research Center( II )