Study on the Damage of 6H‐SiC During the Grinding Process by C‐Ion Implantation Based on Molecular Dynamics
Year: 2025
Type: article
Source: Advanced Theory and Simulations
Institution: Jingdezhen Ceramic Institute
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G3439873259, G6304919012
OpenAlex ID: W4415428552
