Work

InAs/InAlGaAs/(001) InP quantum dot lasers achieving >100°C continuous-wave operation via uniformity-enhanced MOCVD growth

Year: 2025

Type: article

Source: Optics Letters

DOI: 10.1364/ol.574282

Authors: Weijie Gao, Xuezhe Yu, Zizhuo Liu, Bin Wang, Yugang Zeng, Changlei Wu, Wei Chen, Li Qin, Yongqiang Ning, Lijun Wang

Institutions: Chinese Academy of Sciences, University of Chinese Academy of Sciences, University of Electronic Science and Technology of China

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jilin Scientific and Technological Development Program

Awards: G3768958984, G5063899986, G5098687727, G6139739689, G7900885891, G8013300023

OpenAlex ID: W4415439347

FWCI: 1.156

Cites: 16

Cited by: 3

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