Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer
Year: 2025
Type: article
Abstract: Tin-based perovskites are emerging as less-toxic alternatives to their lead-based counterparts for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). However, despite their great potential, the efficiency of pure red tin-based perovskite LEDs (Sn-LEDs) still lags behind that of lead-based perovskite LEDs (Pb-LEDs), partly due to the poor electron blocking at the PEDOT:PSS/perovskite interface. This leads to detrimental nonradiative recombination pathways that limit the performance of the LEDs. In this study, we replaced the conventional PEDOT:PSS layer with the self-assembled monolayer (SAM) EADR03, presenting, to the best of our knowledge, the first report of a SAM employed as a hole-selective layer in Sn-LEDs. EADR03 simultaneously acted as an efficient electron-blocking and hole-injecting layer, thereby reducing interfacial recombination losses and enhancing the LEDs' performance. As a result, we achieved a 3-fold enhancement in external quantum efficiency, propelling the advancement of more efficient tin-based perovskite LEDs.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Funders: Università degli Studi di Napoli Federico II, University of Oxford, European Commission, Ministerstvo Školství, Mládeže a Tělovýchovy, Euskal Herriko Unibertsitatea, Ikerbasque, Basque Foundation for Science, Vysoké Učení Technické v Brně, Ministerio de Ciencia e Innovación, Central European Institute of Technology, Univerzita Pardubice, HORIZON EUROPE Framework Programme, Agencia Nacional de Promoción Científica y Tecnológica, Agencia Estatal de Investigación, HORIZON EUROPE European Innovation Council
Awards: G1061593195, G121809054, G1855990336, G1877689704, G210753366, G2262748287, G2660406951, G3480869486, ROOM TEMPERATURE SUPERRADIANT PEROVSKITE LASERS, G3518538256, G3681454997, Center of Materials and Nanotechnologies, G4042783231, G425668148, G4332708042, G4442677895, G4526231891, G5210757345, G5234960105, G5421974903, G5933510654, G7084143925, G7434936867, G8797590163, G8920660035
OpenAlex ID: W4415439808
