Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C–V Investigation
Year: 2025
Type: article
Abstract: /TiN MOS stack, both fabricated devices exhibit promising transistor behavior, with steady normally OFF operation, very low gate leakage current, and good switching performance. Following the extraction of a low effective channel mobility, the frequency dependence of gate-to-source C-V characteristics is studied. In addition, using TCAD Sentaurus Synopsys simulations, the impact of positive fixed charge and donor-type defects at the p-GaN/dielectric interface is investigated, together with the frequency dependency. Finally, by comparing experimental and simulated results, a mechanism is proposed linking the observed threshold voltage shift to the presence of sharp trench-bottom micro-trenching. This mechanism may further explain the origin of the additional C-V hump observed at high frequencies, which could arise from charge trapping at the p-GaN/dielectric interface or from charge inversion in the p-GaN region.
Source: Micromachines
DOI: 10.3390/mi16111193
Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Université Grenoble Alpes, Université de Tours, Institut National des Sciences Appliquées Centre Val de Loire, GREMAN, Matériaux, Microélectronique, Acoustique, Nanotechnologies
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
Funder: Agence Nationale de la Recherche
OpenAlex ID: W4415447448