The electron affinity of HgCdTe
Year: 2025
Type: article
Abstract: An accurate formula for electron affinity is necessary for the correct modeling of Hg1−xCdxTe devices. We show that the most commonly used formula is inaccurate. We construct a generalized equation for the electron affinity based on certain properties of the HgCdTe alloy system and select the experimental values to insert, producing a recommended formula that is useful in device modeling. We also find that in a graded HgCdTe structure, very nearly 2/3 of the bandgap change will appear in the conduction band. In addition, we explain why the electron affinity rule (conduction band offset equals the electron affinity difference) remains valid for HgCdTe–HgCdTe heterojunctions, even though it does not apply to heterojunctions in general.
Source: Journal of Applied Physics
DOI: 10.1063/5.0300709
Authors: David R. Rhiger, Jamal I. Mustafa
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,500
OpenAlex ID: W4415466429