Polarity-dependent dual-mode AlN-embedded RRAM with improved stochastic switching and synaptic modulation for neuromorphic computing
Year: 2025
Type: article
Source: The Journal of Chemical Physics
DOI: 10.1063/5.0298600
Institutions: Dongguk University, Inha University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G4996582128
OpenAlex ID: W4415466623
