Year: 2025
Type: article
Abstract: We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase is recovered after implantation by solid phase recrystallization. Independent of the metal used, contacts on n-type samples resulted in Schottky barriers due to Fermi level pinning of hex-SiGe. Overall, this constitutes a first step toward use of hex-SiGe for optoelectronic applications.
Source: Applied Physics Letters
DOI: 10.1063/5.0287884
Institutions: IBM Research - Zurich, Eindhoven University of Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Award: G8787284997
OpenAlex ID: W4415470597