Work

Diffusing the photon-assisted regenerated holes to increase the WPE for 259 nm AlGaN-based DUV LEDs with three-dimensional n-ZnO/p-AlGaN photon-sensitive micro-structure arrays

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0289146

Authors: Chunshuang Chu, Meixuan Du, Wenjie Li, Jianyu Liu, Naixin Liu, Jianchang Yan, Yonghui Zhang, Zi-Hui Zhang

Institutions: Guangdong University of Technology, Hebei University of Technology, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2517984509, G7535420971

OpenAlex ID: W4415470600

FWCI: 0.633

Cites: 30

Cited by: 2

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