Work

Multilevel Nonvolatile Ferroelectric Diode Employing HfZrO x and Metal Oxynitride Semiconductor for Neuromorphic Computing

Year: 2025

Type: article

Source: ACS Materials Letters

DOI: 10.1021/acsmaterialslett.5c00659

Authors: Yuseong Jang, Junhyeong Park, Seungyoon Shin, Soobin An, Soo-Yeon Lee

Institution: Seoul National University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and ICT, South Korea

Awards: G2753464439, G6196031086

OpenAlex ID: W4415474397

FWCI: 0.453

Cites: 52

Cited by: 2

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