Work

Highly Reliable MoS 2 Flash Memory with Ultrathin TaO x Tunneling Layer Formed via Partial Oxidation of TaS 2 Floating Gate

Year: 2025

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.5c14262

Authors: Hoseong Shin, Yunseo Song, Kwangro Lee, Jaehoon Lee, Hyungyu Choi, Nasir Ali, Danbi Lee, Gil-Ho Kim, Min Sup Choi, Boseok Kang, Won Jong Yoo

Institutions: Sungkyunkwan University, Chungnam National University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea, Ministry of Science and ICT, South Korea

Awards: G1408299025, G1760515783, G20368804, G5089272017, G5640869663, G6519507444, G6544262330, G6827177261, G852346845, G8742920661

OpenAlex ID: W4415478693

FWCI: 0.831

Cites: 59

Cited by: 4

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