Work

On Rydberg excitons in two-dimensional semiconductors

Year: 2025

Type: article

Abstract: We study Rydberg excitons in two-dimensional transition-metal dichalcogenide semiconductors, using the Rytova-Keldysh potential to account for nonlocal dielectric screening effects. We determine exciton binding energies in monolayer WSe\(_2\) and WS\(_2\) by the variational method. We perform calculations for different dielectric environments (isolation, hBN encapsulation, and SiO\(_2\) substrate support) to investigate the influences of the surrounding dielectric environment. Our theoretical results agree reasonably with experimental measurements and previous numerical calculations. The study shows a strong dependence of exciton binding energy and spatial extent on both the principal and angular quantum numbers, as well as on the surrounding dielectric environment.

Source: Communications in Physics

DOI: 10.15625/0868-3166/23107

Authors: Ngoc Cam Hoang, Nhu Dat Nguyen, Thi Man Duong, Thi Bich Thao Pham, Hieu Nguyen-Truong

Institutions: Viện Vật lý, Vietnam Academy of Science and Technology, Can Tho University, Van Lang University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

Funder: National Foundation for Science and Technology Development

Award: Môi trường điện môi và phổ năng lượng exciton trong bán dẫn mỏng cỡ nguyên tử. Exciton Rydberg