Year: 2025
Type: article
Abstract: Ultraviolet (UV) photoresponse characteristics have been demonstrated in a p+-Si/n-ZnO bilayer structure photodetector. Unlike single-layer ZnO photodetectors, the device can be regarded as two series-connected p-n junctions. The photo-induced carriers can be effectively modulates by built-in electric field during light on/off switching cycles. In contrast to conventional lateral carrier transport, longitudinal carrier movement in this structure significantly shortens charge migration paths. Consequently, the bilayer structure device exhibits superior performance metrics, demonstrating enhanced responsivity and accelerated response speeds compared to single ZnO photodetector.
Source: Scientific Reports
Authors: Wenqing Song, Rongping Yu, Mengdi Chen, Rui Liu, Ruizhi Zhang, Tao Li, Lei Zhang
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
Awards: G165179718, G8410458612
OpenAlex ID: W4415501628