Work

High-Performance InSb-Based High-Electron-Mobility Transistors Grown on a GaAs Substrate

Year: 2025

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c00764

Authors: Haiyun Dong, Yixuan Zhu, Yang Zhang, Yiping Zeng, Quanyong Lu

Institutions: Beijing Academy of Quantum Information Sciences, Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Chinese Polar Environment Comprehensive Investigation and Assessment Programmes

Awards: G2415241208, G6438045187, G7377253571

OpenAlex ID: W4415545206

FWCI:

Cites: 31

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