Work

Band Alignment and Leakage Mechanism Analysis of p-Si/n-AlN Heterojunction Diodes with the Al 2 O 3 Interlayer

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01317

Authors: Yi Lu, Jie Zhou, Haicheng Cao, Tsung-Han Tsai, Mike Eller, Jiarui Gong, Yang Liu, Connor Bailey, Stephanie Liu, Haris Naeem Abbasi, Dong Liu, Zhiyuan Liu, Mingtao Nong, Katherine Fountaine, Vincent Gambin, Xiaohang Li, Zhenqiang Ma

Institutions: University of Wisconsin–Madison, King Abdullah University of Science and Technology, Northrop Grumman (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: King Abdullah University of Science and Technology, Defense Advanced Research Projects Agency, Division of Electrical, Communications and Cyber Systems

Awards: G1890610161, G2435439527, G798829295

OpenAlex ID: W4415566568

FWCI: 1.57

Cites: 50

Cited by: 5

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