Work

Mechanistic insights into the dry oxidation of amorphous silicon nitride: a DFT study

Year: 2025

Type: article

Abstract: O defects in amorphous Si 3 N 4 behave very differently compared to the crystalline phase. Local excess of O defects facilitates the initial substitution of N, rationalising the exceptional oxidation resistance and measured NO : N 2 formation ratios.

Source: Journal of Materials Chemistry C

DOI: 10.1039/d5tc03484a

Authors: Lukas Hückmann, Robert Sylvia, Floris Blankenvoorde, Jonathon Cottom, Jörg Meyer

Institutions: Leiden University, Advanced Research Center for Nanolithography (Netherlands), Institute for Theoretical Physics Amsterdam, University of Amsterdam

Language: English

Topic: Advanced ceramic materials synthesis

Subfield: Ceramics and Composites

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4415572537

FWCI: 0.635

Cites: 103

Cited by: 2

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