GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure
Year: 2025
Type: article
Abstract: GaN power high electron mobility transistors (HEMTs) with a breakdown voltage (BV) exceeding 2500 V at I DSS leakage of 1 μ A mm −1 grown by plasma-assisted MBE (PA-MBE) on sapphire was demonstrated with a single field plate structure. Subdividing the 70 nm GaN channel into 12 layers has been shown to exhibit fewer defect states and reduced pore defects, thereby benefiting the BV. The single gate field plate technique helps to simplify the peak electric field condition and also contributes to the high BV. These advantages underscore the potential of the PA-MBE-grown GaN power HEMT for high-power electronic applications.
Source: Applied Physics Express
Authors: Zhichao Yang, Eason Liao, Daniel Ding, Jungang Zhuang, Hao Dong, Han Yang, Lei Zhu, Bingliang Zhang, Guohao Yu, Zhongming Zeng, Baoshun Zhang
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,365
OpenAlex ID: W4415599435