Work

Investigation of the γ-irradiation-induced degradation mechanism of p-channel p-GaN/u-GaN/AlGaN MESFETs

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0283348

Authors: Yu Du, Huake Su, Tao Zhang, Kai Su, Jiahao Chen, Shengrui Xu, Yuhong Du, Yue Hao, Jincheng Zhang

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities, National Science Fund for Distinguished Young Scholars, Key Research and Development Projects of Shaanxi Province, Natural Science Basic Research Program of Shaanxi Province

Awards: G3925733209, G3927197278, G3938063439, G4613421360, G6164203504, G8551979593

OpenAlex ID: W4415617950

FWCI: 0.323

Cites: 25

Cited by: 1

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