Ab-Initio Transport Study of Source-to-Channel Resistance in Metal-MoS ${ }_{2}$ Top Contacts Including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment
Year: 2025
Type: conference-paper
Abstract: We present an ab-inito transport study, based on the Density Functional Theory (DFT) and the non-equilibrium Green's Functions (NEGF) formalism, to assess the effect of the Image Force Barrier Lowering (IFBL) on the source-tochannel resistance ($R_{\mathbf{C}}$) in metal-MoS2top contacts. To compute the IFBL potential profile, our model relies on the numerical solution of the 3D Poisson equation for the point charge in a heterogeneous dielectric environment. By considering Al-MoS2and Bi-MoS2van-der-Waals heterojunctions, representative of a Schottky and an Ohmic contact respectively, we show that, while for Schottky contacts the inclusion of the IFBL has a vast impact on the source-to-channel resistance, in quasi-Ohmic contacts the influence of the IFBL on the$R_{\mathbf{C}}$becomes negligible, especially at large inversion densities.
Institution: University of Udine
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4415624939