Work

Multi-Band Model Hamiltonian for Tunnel Devices with Van Der Waals Heterojunctions

Year: 2025

Type: conference-paper

Abstract: We study the electronic properties of a van der Waals (vdW) heterostructure made of$\text{SnSe}_{2}$and$\text{WSe}_{2}$by abinitio methods in order to simulate an Esaki diode built with these materials. We use Density Functional Theory (DFT) to parametrize a$\mathrm{k} \cdot \mathrm{p}$model in order to achieve the transport calculations. Furthermore we introduce a tunneling coefficient parametrized by DFT. This coefficient depends on the electric field in the device in order to precisely describe the quantum tunneling happening in the heterostructure. This model Hamiltonian is then used to compute current-voltage characteristics for our Esaki diode via Non-Equilibrium Green's Functions (NEGF) calculations.

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.1109/sispad66650.2025.11186327

Authors: Owen Loison, Adel M'Foukh, Davide Romanin, Marco Pala, Philippe Dollfus

Institutions: Centre National de la Recherche Scientifique, Centre de Nanosciences et de Nanotechnologies, University of Udine

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: Agence Nationale de la Recherche

Award: Scalable Tunneling diodes based on 2D materials