Year: 2025
Type: conference-paper
Abstract: Different groups worldwide have been working with the GlobalFoundries${}^{\text {TM }}$22nm platform$(22 \text{FDX}(\mathrm{R})$with the hopes of industrializing the fabrication of Si spin qubits. To guide this effort, we have performed a systematic study of six of the foundry's processes of reference (POR). Using effective mobility as a figure of merit, we study the impact of gate stack, channel type and back bias as a function of temperature. This screening process selected qubit devices that allowed us to couple quantum dots along both the length and width of the Si channel. Simulations provide insights into potential technology optimizations and the advantages of leveraging forward body bias within an FDSOI qubit platform.
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4415625023