Work

TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs

Year: 2025

Type: conference-paper

Abstract: The n-type and p-type operations of 22 nm Fully Depleted Silicon on Insulator (FDSOI) Three-Independent-Gates Reconfigurable Field Effect Transistors (TIG-RFETs) are simulated, incorporating Schottky contacts to the drift-diffusion model. Key-features are selected and adjusted to fit experimental results, like: Schottky barrier height (SBH), direct tunnelling and presence of traps. The inclusion and correct adjustment of these parameters reveals the importance of strong electrostatic control over the energetic barrier at the metal-semiconductor junctions. We extend this analysis with a study of the theoretical impact of the metal-semiconductor interface position under the sourcedrain gates coupled with the length of the ungated regions.

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.1109/sispad66650.2025.11186366

Authors: J.M. Gonzalez-Medina, L.-C. Hung, Y. He, A. Arsalane, O. Baumgartner, T. Mikolajick, J. Trommer, C. Mukherjee, M. Karner

Institutions: NaMLab (Germany), Centre National de la Recherche Scientifique, Université de Bordeaux, Laboratoire de l'Intégration du Matériau au Système, Institut Polytechnique de Bordeaux

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: European Commission

OpenAlex ID: W4415625157

FWCI: 2.358

Cites: 20

Cited by: 1

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