Work

Pathway to >60% Efficiency in AlGaN‐Based Ultraviolet‐C Light‐Emitting Diodes

Year: 2025
Type: article
Abstract: Ray‐tracing simulations of ultraviolet‐C light‐emitting diodes (UVC LEDs) reveal that the primary limitation in light extraction efficiency (LEE) is the absorption in the LED layers, contacts, and substrate—not the high refractive index of AlGaN, as is commonly suspected. The research demonstrates a significant improvement in LEE with the removal of the p‐GaN contact layer and the use of highly reflective UVC contact metallization, far surpassing the efficiency gains achievable through typically applied surface modifications alone. Multiple internal reflections raise the probability of photon escape. The model agrees well with measurements from representative UVC LEDs and suggests routes to achieve LEE >60%.
Language: English
Open Access status: hybrid
Estimated APC paid: $3,780
OpenAlex ID: W4415644412
FWCI:
Cites: 43
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