Work

From Pinhole Density to Nucleation Onset: A Numerical Model for SAM Barrier Performance in Selective Atomic Layer Deposition

Year: 2025

Type: article

Source: The Journal of Physical Chemistry C

DOI: 10.1021/acs.jpcc.5c06018

Authors: Wenda Liu, Yanwei Wen, Rong Chen, Bin Shan

Institution: Huazhong University of Science and Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G4798214654, G5922455198, G6949762422

OpenAlex ID: W4415678401

FWCI: 0.452

Cites: 47

Cited by: 2

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