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Scalability of 28-nm Ternary CMOS Technology Using Halo Profile for Low-leakage and High-density SRAM

Year: 2025

Type: article

Source: JSTS Journal of Semiconductor Technology and Science

DOI: 10.5573/jsts.2025.25.5.502

Authors: Woo-Seok Kim, Kwan-Yong Lee, Sang-Hun Yeo, In-Jun Jang, Young-Eun Choi, MinWoo Ryu, Kyung-Rok Kim

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4415681859

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