Work

Establishment and modulation of linear VTH model with low interface states using atomic layer etching for E-mode GaN-based P-MOSFETs for digital logic application

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0282612

Authors: Yifan Gao, Ling Yang, Qing Zhu, Bin Hou, Qingyuan Chang, Xuan Su, Mei Wu, Meng Zhang, Hao Lu, Xiaohua Ma, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Fundamental Research Funds for the Central Universities, Natural Science Basic Research Program of Shaanxi Province

Awards: G3186942771, G3372063648, G3456627024, G5536712496, G5752182232, G6267237474, G6424370169, G6950084816, G7185126207, G7225868883

OpenAlex ID: W4415700350

FWCI: 1.24

Cites: 32

Cited by: 4

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