Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga 2 O 3 on Al 2 O 3 (0001) and GaN (0001) Substrates

Year: 2025

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide We present an analysis of the phase stabilization of β-Ga 2 O 3 and κ-Ga 2 O 3 grown by metal–organic vapor-phase epitaxy with varying supersaturation of the gas-phase precursors on c-sapphire and GaN substrates. We compare in-depth structural analyses of the bulk and interface layers, also through the measurement of strain relaxation across the structure, with a comprehensive nucleation model, based on multiscale simulations. A coherent and quantitative interpretation of different stages of the nucleation of Ga 2 O 3 phases on sapphire is elaborated on, highlighting the crucial role of the supersaturation of gas precursors and of the residual misfit strain within the initial layers in the stabilization of competing Ga 2 O 3 polymorphs.

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c13401

Authors: L. Seravalli, A. Ugolotti, R. Bergamaschini, M. Bosi, I. Cora, F. Mezzadri, P. Mazzolini, L. Cademartiri, I. Bertoni, Zs. Fogarassy, B. Pécz, O. Bierwagen, A. Ardenghi, S. Leone, L. Nasi, L. Miglio, R. Fornari

Institutions: Institute of Materials for Electronics and Magnetism, National Research Council, University of Milano-Bicocca, Institute for Technical Physics and Materials Science, HUN-REN Centre for Energy Research, University of Parma, Paul Drude Institute for Solid State Electronics, Forschungsverbund Berlin, Fraunhofer Institute for Applied Solid State Physics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,500

Funders: Dipartimenti di Eccellenza, European Commission, Deutsche Forschungsgemeinschaft, Ministero dell’Istruzione, dell’Università e della Ricerca, Magyar Tudományos Akadémia, Nemzeti Kutatási, Fejlesztési és Innovaciós Alap, NextGenerationEU

OpenAlex ID: W4415728803