Work

Correction: The leakage current suppression mechanism in a RuO 2 /SrTiO 3 /Ru capacitor induced by introduction of an ultra-thin GeO 2 interfacial layer at the bottom interface

Year: 2025

Type: erratum

Abstract: Correction for ‘The leakage current suppression mechanism in a RuO 2 /SrTiO 3 /Ru capacitor induced by introduction of an ultra-thin GeO 2 interfacial layer at the bottom interface’ by Heewon Paik et al. , J. Mater. Chem. C , 2025, https://doi.org/10.1039/d5tc02736e.

Source: Journal of Materials Chemistry C

Authors: Heewon Paik, Dohyun Kim, Junil Lim, Haengha Seo, Tae Kyun Kim, Jong Hoon Shin, Haewon Song, Hansub Yoon, Dae Seon Kwon, Dong Gun Kim, Jung-Hae Choi, Cheol Seong Hwang

Institutions: Seoul National University, Korea Institute of Science and Technology, Sookmyung Women's University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funder: National Research Foundation of Korea

Award: G7208142174

OpenAlex ID: W4415733889

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