Year: 2025
Type: article
Abstract: This study explores the challenges associated with translating electrical characteristics of individual two-dimensional semiconductor nanosheets into a network of partially overlapping sheets. Such systems typically suffer from high-energy barriers required to overcome the junctions formed between the adjacent nanosheets, and consequently quench the current passing through the network. We use in-operando Kelvin probe force microscopy to image electrostatic potential profiles during the operation of MoS 2 nanosheet network transistors. Direct imaging of the potential drops allows us to distinguish contributions from individual nanosheets and those from junctions, correlated by the junction-related potential drops with the network morphology. A diagram-based model is developed to describe the system numerically and to estimate the current path formation probabilities. Finally, a correlation with the integral electrical characteristics of the nanosheet-based transistors is made using a robust Y-function approach. It is shown that the total junction resistance is well estimated by the proposed equivalent circiut model.
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,405
Awards: G1383882326, G153387682, G2348749588, G2682341234, Polarized 2D Materials Inspired by Naturally Occurring Phyllosilicates, G3504504218, G4200911260, G4653214689, G5098725405, Advanced Materials and BioEngineering Research Centre (AMBER), G645112151, ULtra ThIn MAgneto Thermal sEnsor-Ing, AMBER_Phase 2, HIDDEN PHASES IN 2D-QUANTUM MATERIALS, G7997371195, G816159239, G936428594
OpenAlex ID: W4415743107