Work

Scalable Thermal Characterization and Stress Type Comparison on 55nm SiGe HBT

Year: 2025

Type: conference-paper

Abstract: In this paper, the thermal behaviour of 55 nm SiGe HBT is investigated. A thermal network is implemented to represent heat dissipation through the device. DC and AC measurements are performed to extract the associated parameters compatible with HICUM_L2 compact model. Afterwards, DC and pulsed stresses are performed and compared for different bias conditions and different frequencies.

Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

DOI: 10.1109/bcicts63111.2025.11211184

Authors: A. Sarafinof, C. Mukherjee, M. De Matos, L. Réveil, F. Cacho, C. Maneux

Institutions: Université de Bordeaux, Laboratoire de l'Intégration du Matériau au Système, STMicroelectronics (France)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4415745970

FWCI:

Cites: 11

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