Work

Improvement of radiation hardness for a novel InP-based HEMT with graded In1-xGaxAs channel layer and double Si-doped structure

Year: 2025

Type: article

Abstract: • A novel structure incorporating a graded In 1-x Ga x As channel layer and double Si-doped structure of InP-based HEMT (DPLC-HEMT) is proposed to enhance the radiation resistance. • After 75-keV irradiation with a proton dose of 2 × 10 12 cm −2 , the f T and f max of DPLC-HEMT are only decreased by 9.3% and 5.2%, while, the f T and f max of conventional InP-based HEMT (C-HEMT) are decreased by 26.2% and 21.2%, respectively. • Compared to the C-HEMT, the f T and f max for DPLC-HEMT reached to 460 GHz and 944 GHz, representing a 85.5% and 47.5% increase. The I sat and g max of the DPLC-HEMT has improved by 125.1% and 83.0% compared to the C-HEMT. To enhance the radiation resistance of the InP-based HEMT, a novel structure incorporating a graded In 1-x Ga x As channel layer and double Si-doped structure (DPLC-HEMT) is proposed. First, a deeper quantum well is formed due to the introduction of graded In 1-x Ga x As channel, that efficiently confines electrons within the quantum well, lead to the boosting of electron density in the channel. Second, the double Si-doped structure further boosts the electron density in the quantum well. The increase in native carriers reduces the effect of carrier removal caused by irradiation defects, thereby enhancing the radiation resistance of the DPLC-HEMT. The simulation results show that after 75-keV irradiation with a proton dose of 2 × 10 12 cm − 2 , the saturation drain current ( I sat ), peak transconductance ( g max ), f T and f max of DPLC-HEMT are decreased by 23%, 13.2%, 9.3% and 5.2%, respectively, while, the I sat , g m,max , f T and f max of conventional InP-based HEMT (C-HEMT) are decreased by 64%, 29.5%, 26.2% and 21.2%, respectively. It can be seen that DPLC-HEMT effectively enhances the anti-proton irradiation ability. Moreover, the DC and RF characteristics were also improved for the DPLC-HEMT. Compared to the C-HEMT, the peak value of the f T for DPLC-HEMT has increased from 248 GHz to 460 GHz, representing a 85.5% increase, the peak value of the f max for DPLC-HEMT has increased from 640 GHz to 944 GHz, representing a 47.5% increase. The I sat and g max of the DPLC-HEMT has improved by 125.1% and 83.0% compared to the C-HEMT.

Source: Results in Engineering

DOI: 10.1016/j.rineng.2025.108000

Authors: Shuxiang Sun, Xintong Xie, Hongying Mei, Xiaorong Luo, J. Ajayan

Institutions: Huanghuai University, University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, SR University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,940

Funders: National Natural Science Foundation of China, Natural Science Foundation of Henan Province, Henan Provincial Science and Technology Research Project