A High Switching Ratio Ti 3 C 2 :V 2 O 5 -Based Memristor for Artificial Synapse and Simulation of Human Body Water Dynamics
Year: 2025
Type: article
Source: ACS Materials Letters
Authors: Ziyang Guan, Mao Zhang, Chongwen Xu, Haowan Shi, Zhen Zhao, Xinran Liu, Tianzhu Xu, Caijing Wu, Jianhui Zhao, Hong Wang, Xiaobing Yan, Zhongrong Wang
Institution: Hebei University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, Department of Education of Hebei Province, Natural Science Foundation of Hebei Province, Hebei University, Hebei Provincial Key Research Projects, National Key Research and Development Program of China, Program for Top 100 Innovative Talents in Colleges and Universities of Hebei Province
OpenAlex ID: W4415809589