Work

Dual Effect of Defect-Free AlO x F y Layer for Suppressing Hydrogen Influence in Indium–Gallium–Zinc Oxide Thin-Film Transistors

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c16863

Authors: Chang-Yun Na, Changjun No, Byungkwon Lim, Sung Min. Cho

Institution: Sungkyunkwan University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and ICT, South Korea

Award: G949551226

OpenAlex ID: W4415813132

FWCI: 0.231

Cites: 33

Cited by: 1

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