Prediction of single event effects in SiC MOSFET devices based on deep learning
Year: 2025
Type: article
Source: Nanotechnology
Authors: Yixian Guo, Yingqi Chen, Xiaozhi Du, Shuhuan Liu, Qian Wang
Institutions: Xi'an Jiaotong University, China Institute of Atomic Energy
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G826070041
OpenAlex ID: W4415827743
