Work

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Gallium Nitride

Year: 2025

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide This work reports on the successful intrinsic area-selective deposition of GaN films by thermal atomic layer deposition at back-end-of-line compatible temperatures. Using sequential pulses of trimethylgallium and ammonia (NH 3 ) at a substrate temperature of 673 K, polycrystalline GaN is selectively formed onto AlN on substrates consisting of patterned AlN on thermal SiO 2 . Before the deposition of GaN, a thin film of AlN is deposited selectively by atomic layer deposition on the patterned AlN to enable the deposition of GaN on AlN. The interfaces and layer thicknesses were examined by transmission electron microscopy, spectroscopic ellipsometry, and atomic force microscopy.

Source: ACS Omega

DOI: 10.1021/acsomega.5c03453

Authors: Bernhard Y. van der Wel, Kees van der Zouw, Antonius A.I. Aarnink, Alexey Y. Kovalgin

Institution: University of Twente

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,935

Funders: ASM International, Ministerie van Economische Zaken, Ministerie van Economische Zaken en Klimaat