Work

Straining Monolayer MoS 2 Transistor on a Flat and Rigid SiO 2 Substrate

Year: 2025

Type: article

Source: Nano Letters

DOI: 10.1021/acs.nanolett.5c04916

Authors: Jinghui Gao, Yunxin Li, Kaixin Niu, Yang Chen, Xiao Liu, Shuimei Ding, Quanyang Tao, Weiqi Gao, Zikun Li, Zehao Li, Longbin Zhang, Donglin Lu, Yiliu Wang, Yuan Liu

Institution: Hunan University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Program of Hunan Province, National Key Research and Development Program of China

Awards: G1365603606, G3037073348, G3249081482, G3503067703, G4656635079

OpenAlex ID: W4415836001

FWCI: 0.62

Cites: 49

Cited by: 3

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