Work

Temperature-dependent conduction and optical bandgap reduction in Zn-doped thermally evaporated Sb2Se3 thin film: a comprehensive investigation

Year: 2025

Type: article

Abstract: In this manuscript, we report successful synthesis and investigation of structural, morphological, electrical, and optical properties of doped and undoped Sb 2 Se 3 . A significant enhancement in electrical and optical properties of Zn-doped Sb 2 Se 3 is observed. The temperature dependence of direct current (dc) conductivity has been investigated in thin films of Sb 2 Zn x Se 3-x (where x = 0 and x = 0.25) in the temperature range of 290–490 K to determine the conduction mechanism and examine the effects of doping. It shows that, in the temperature range (343–490 K), conduction is primarily due to thermally activated tunneling of charge carriers through the band tails of localized states. In the lower temperature range 293–343 K, conduction occurs via variable range hopping in the localized states near the fermi level. The decrease in the optical bandgap value as a result of Zn doping in Sb 2 Se 3 has been correlated with the variation in density of states, increased electron–phonon interaction and steepness parameter.

Source: Journal of Materials Science Materials in Engineering

DOI: 10.1186/s40712-025-00291-y

Authors: Nargis Fatima Khatoon, Zubair Aslam, Mohd Shoab, Javid Ali, Mohammad Zulfequar

Institution: Jamia Millia Islamia

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,590

Funder: Jamia Millia Islamia