Year: 2025
Type: article
Abstract: Ion implantation is a low-temperature technique for the introduction of impurities (dopants) into semiconductors and offers more flexibility than diffusion. For instance, in MOS transistors, ion implantation can be used to accurately adjust the threshold voltage. A through study has been p[resented in the p[resent paper.]
Author: G. S. Virdi
Institution: Central Electronics Engineering Research Institute
Language: English
Subfield: Computational Mechanics
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4415855856
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